IXGA30N60C3C1 Datasheet, PDF (7/7 Pages) IXYS Corporation – GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
90
80
t_ri
t_d(on) - - - -
T_J = 125ºC, V_GE = 15V
70
V_CE = 300V
I _C = 40A
60
50
40
30
I _C = 20A
20
10
4
6
8
10
12
14
16
18
R_G - Ohms
30
28
26
24
22
20
18
16
14
20
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
75
21
t_ri
t_d(on) - - - -
65
R_G = 5Ω , V_GE = 15V
V_CE = 300V
55
20
I _C = 40A
19
45
18
35
17
I _C = 20A
25
16
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
60
24
t_ri
t_d(on) - - - -
50
R_G = 5Ω , V_GE = 15V
22
V_CE = 300V
40
T_J = 125ºC
20
30
18
T_J = 25ºC
20
16
10
14
0
12
10
15
20
25
30
35
40
I_C - Amperes
Fig. 21. Forward Current vs. Forward Voltage
20
16
T_J = 25ºC
12
T_J = 125ºC
8
4
15
15
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
V_F - Volts
10.000
Fig. 22. Maximum Transient Thermal Impedance for Diode
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
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IXYS REF: G_30N60C3C1(4D)6-03-09