IXGA30N60C3C1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

GenX3^TM 600V IGBT
w/ SiC Anti-Parallel
Diode
High Speed PT IGBTs for
40 - 100kHz Switching
Preliminary Technical Information
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
V_CES = 600V
I_C110 = 30A
V_CE(sat) ≤ 3.0V
t_fi(typ) = 47ns
TO-263 (IXGA)
Symbol Test Conditions
V_CES
V_CGR
V_GES
V_GEM
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 5Ω
Clamped Inductive Load
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
600
V
600
V
± 20
V
± 30
V
60
A
30
A
13
A
150
A
I_CM = 60
A
@ ≤ V_CES
220
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
260
1.13/10
2.5
3.0
6.0
°C
°C
Nm/lb.in.
g
g
g
Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ± 20V
V_CE(sat)
I_C = 20A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min.
Typ. Max.
3.5
5.5 V
25 μA
300 μA
±100 nA
2.6
3.0 V
1.8
V
© 2009 IXYS CORPORATION, All Rights Reserved
G
E
TO-220 (IXGP)
C (TAB)
G
CE
C (TAB)
TO-247 (IXGH)
G
C
E
G = Gate
E = Emitter
C (TAB)
C = Collector
TAB = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Schottky Diode
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100142A(06/09)