IXGK50N60B2D1 Datasheet, PDF (6/6 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

IXGK 50N60B2D1
IXGX 50N60B2D1
160
A
140
I_F ¹²⁰
100
80
60
T_VJ= 25°C
T_VJ=100°C
T_VJ=150°C
40
20
0
0
1
2V
V_F
Fig. 18. Forward current I_F versus V_F
2.0
1.5
K_f
1.0
I_RM
0.5
Q_r
4000
nC
TV_VRJ==
100°C
300V
3000
Q_r
2000
III_FFF===1632000AAA
1000
0
100
A/µs 1000
-di_F/dt
Fig. 19. Reverse recovery charge Q_r
versus -di_F/dt
140
ns
130
t_rr
120
110
T_VJ= 100°C
V_R = 300V
I_F=120A
I_F= 60A
I_F= 30A
100
90
0.0
0
40
80 120 °C 160
T_VJ
Fig.
21.
Dynamic parameters
versus T_VJ
Q_r,
I_RM
1
K/W
0.1
Z_thJC
0.01
80
0 200 400 600 A8/0µ0s 1000
-di_F/dt
Fig. 22. Recovery time t_rr versus -di_F/dt
80
A
TV_VRJ==
100°C
300V
60
I_RM
40
I_F=120A
I_F= 60A
I_F= 30A
20
0
0 200 400 600 A8/0µ0s 1000
-di_F/dt
Fig. 20. Peak reverse current I_RM
versus -di_F/dt
20
1.6
V
V_FR
15
t_fr
µs
t_fr
1.2
V_FR
10
0.8
5
0.4
T_VJ= 100°C
I_F = 60A
0
0.0
0 200 400 600 A80/µ0s 1000
di_F/dt
Fig.
t_fr
23.
Peak
forward
voltage
V_FR
and
versus di_F/dt
Constants for Z_thJC calculation:
i
R_thi (K/W)
t_i (s)
1
0.324
2
0.125
3
0.201
0.0052
0.0003
0.0385
Note: Fig. 18 through Fig. 23 show
typical values
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 24. Transient thermal resistance junction to case
0.1
DSEP 60-06A
s
1
t
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