IXGK50N60B2D1 Datasheet, PDF (1/6 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

Advance Technical Data
HiPerFAST^TM
IGBT with Diode
IXGK 50N60B2D1
IXGX 50N60B2D1
B2-Class High Speed IGBTs
V_CES
I_C25
V_CE(sat)
t_fi(typ)
= 600 V
= 75 A
= 2.0 V
= 65 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
I_C25
T_C = 25°C (limited by leads)
I_C110
T_C = 110°C
I_F110
T_C = 110°C (50N60B2D1 Diode)
I_CM
T_C = 25°C, 1 ms
SSOA
(RBSOA)
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load @ V_CE ≤ 600 V
P_C
T_C = 25°C
T_J
T_JM
T_stg
M_d
Weight
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
50
A
38
A
200
A
I_CM = 80
A
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
10
g
6
g
300
°C
Symbol
Test Conditions
V_GE(th)
I_CES
I_GES
V_CE(sat)
I_C = 250 µA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = 40 A, V_GE = 15 V
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0
5.0
V
T_J = 25°C
T_J = 125°C
600 µA
5 mA
±100 nA
T_J = 125°C
1.6 2.0
V
1.5
V
TO-264
(IXGK)
G
C
E
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
CE
C = Collector
Tab = Collector
(TAB)
Features
• High frequency IGBT and
anti-parallel FRED in one package
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I_RM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DS99146A(03/04)