IXGA16N60B2D1 Datasheet, PDF (6/7 Pages) IXYS Corporation – HiPerFAST IGBTs B2-Class High Speed w/ Diode

IXGA16N60B2D1 IXGP16N60B2D1
IXGH16N60B2D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
1.2
1.1
1.1
E_off
E_on - - - -
1.0
T_J = 125ºC , V_GE = 15V
V_CE = 400V
0.9
0.8
1.0
0.9
0.8
I _C = 24A
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
I _C = 12A
0.3
0.3
0.2
0.2
0.1
20
30
40
50
60
70
80
90
100
R_G - Ohms
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1
1
0.9
E_off
E_on - - - -
0.9
0.8
R_G = 22Ω , V_GE = 15V
0.8
V_CE = 400V
0.7
0.7
0.6
0.6
0.5
T_J = 125ºC
0.5
0.4
0.4
0.3
0.3
0.2
T_J = 25ºC
0.2
0.1
0.1
0
0
12 13 14 15 16 17 18 19 20 21 22 23 24
I_C - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1
1
0.9
E_off
E_on - - - -
0.9
0.8
R_G = 22Ω , V_GE = 15V
V_CE = 400V
0.8
0.7
0.7
0.6
0.6
I _C = 24A
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
I _C = 12A
0.1
0
0
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
190
330
180
t_fi
t_d(off) - - - -
300
T_J = 125ºC, V_GE = 15V
170
V_CE = 400V
270
160
240
150
210
I _C = 24A
140
180
130
I _C = 12A
150
120
120
110
90
100
60
20
30
40
50
60
70
80
90
100
R_G - Ohms
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
200
200
180
t_fi
t_d(off) - - - -
180
R_G = 22Ω , V_GE = 15V
160
V_CE = 400V
160
140
140
120
T_J = 125ºC
120
100
100
80
80
60
T_J = 25ºC
60
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
180
180
160
t_fi
t_d(on) - - - -
R_G = 22Ω , V_GE = 15V
160
140
V_CE = 400V
140
120
120
I _C = 24A, 12A
100
100
80
80
60
60
40
40
12 13 14 15 16 17 18 19 20 21 22 23 24
I_C - Amperes
40
40
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.