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IXGA16N60B2D1 Datasheet, PDF (2/7 Pages) IXYS Corporation – HiPerFAST IGBTs B2-Class High Speed w/ Diode
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
IC = 12A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 12A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 12A, VGE = 15V
VCE = 400V, RG = 22Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = 12A, VGE = 15V
VCE = 400V, RG = 22Ω
Note 2
RthJC
RthCK
TO-220
TO-247
IXGA16N60B2D1
Characteristic Values
Min. Typ. Max.
8
S
675
pF
70
pF
20
pF
24
nC
5
nC
13
nC
18
ns
20
ns
0.16
mJ
73
ns
70
ns
0.12 0.22 mJ
17
ns
20
ns
0.26
mJ
140
ns
125
ns
0.38
mJ
0.50
0.21
0.83 °C/W
°C/W
°C/W
IXGP16N60B2D1
IXGH16N60B2D1
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF
IF = 10A, VGE = 0V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
3.0 V
1.7
V
IRM
IF = 12A, VGE = 0V,
2.5
A
trr
-diF/dt = 100A/μs, VR = 100V, TJ = 125°C
110
ns
trr
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
30
ns
RthJC
2.5 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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