GWM180-004X2 Datasheet, PDF (6/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

GWM 180-004X2
48
44
t_rr
40
[ns]
36
32
V_R = 15 V
T_VJ = 125°C
150 A
100 A
50 A
200 300 400 500 600 700 800
-di_F /dt [A/µs]
Fig. 13 Reverse recovery time t_rr
of the body diodes vs. di/dt
0.6
0.5
0.4
Q_rr
0.3
[µC]
0.2
I_F = 50 A
100 A
150 A
0.1
0.0
200
400
600
800
-di_F /dt [A/µs]
Fig. 15 Reverse recovery charge Q_rr
of the body diodes versus di/dt
20
16
I_RM ¹²
[A] ⁸
I_F = 50 A
100 A
150 A
4
0
200 300 400 500 600 700 800
-di_F /dt [A/µs]
Fig. 14 Reverse recovery current I_RM
of the body diodes versus di /dt
400
350
300
I_S ²⁵⁰
200
[A] ₁₅₀
100
50
T_J = -25°C
25°C
125°C
150°C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD [V]
Fig. 16 Source current I_S versus
source drain voltage V_SD (body diode)
Fig. 17 Definition of switching times
0.7
0.6
0.5
Z_th 0.4
[K/W] ^0.3
0.2
0.1
0.0
0.001
0.01
0.1
t [s]
IXYS reserves the right to change limits, test conditions and dimensions.
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