GWM180-004X2 Datasheet, PDF (4/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

GWM 180-004X2
1.2
I_DSS = 0.25 mA
1.1
V_DSS
1.0
normalized
0.9
0.8
0.7
-25 0 25 50 75 100 125 150
T_J [°C]
Fig. 1 Drain source breakdown voltage V_DSS
versus junction temperature T_VJ
400
300
I_D
200
[A]
100
V_GS =
20 V
15 V
10 V
T_VJ = 25°C
0
0
1
2
3
V_DS [V]
Fig. 3 Typical output characteristic
7V
6.5 V
6V
5.5 V
5V
4
400
350 V_DS = 16 V
300
250
I_D
200
[A] ₁₅₀
100
TJ = 125°C
50
TJ = 25°C
0
0123456789
V_GS [V]
Fig. 2 Typical transfer characteristic
400
V_GS =
20 V
15 V
300 _{10 V}
I_D
200
[A]
100
T_VJ = 125°C
7V
6.5 V
6V
5.5 V
5V
0
0
1
2
3
4
V_DS [V]
Fig. 4 Typical output characteristic
2.5
V_GS = 10 V
I_D = 135 A
2.0
1.5
R_DS(on)
norm.
1.0
R_DS(on) normalized
0.5
5
4.0
R_DS(on)
3.5
4
5 V 5.5 V 6 V
3.0
3
R_DS(on)
mΩ
2
R_DS(on)^2.5
norm. _2.0
1.5
1
1.0
6.5 V
7V
T_VJ = 125°C
V_GS = 10 V
15 V
20 V
0.0
0
-25 0 25 50 75 100 125 150
T_VJ [°C]
Fig. 5 Typ. drain source on-state resistance
R_DS(on) versus junction temperature T_J
IXYS reserves the right to change limits, test conditions and dimensions.
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0.5
0
100
200
300
400
I_D [A]
Fig. 6 Typ. drain source on-state resistance
R_DS(on) versus I_D
20110307c
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