VBO52-18NO7 Datasheet, PDF (5/5 Pages) IXYS Corporation – Standard Rectifier Module

VBO52-18NO7
Rectifier
100
80
500
50 Hz
0.8 x V _RRM
10000
V_R = 0 V
I_F ⁶⁰
[A] ₄₀
20 T_VJ =
125°C
150°C
0
T_VJ = 25°C
0.4
0.8
1.2
1.6
V_F [V]
Fig. 1 Forward current vs.
voltage drop per diode
400
I_FSM
[A]
300
T_VJ = 45°C
T_VJ = 150°C
I²t
1000
[A²s]
T_VJ = 45°C
T_VJ = 150°C
200
0.001
0.010
0.100
t [s]
1.000
Fig. 2 Surge overload current
vs. time per diode
100
1
10
t [ms]
Fig. 3 I²t vs. time per diode
30
20
P_tot
[W]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
R_thJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
Graph 1*
100
80
60
I_F(AV)M
40
[A]
20
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0
10
20
0 25 50 75 100 125 150 175
I_dAVM [A]
T_A [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0
0 25 50 75 100 125 150
T_C [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
1.2
0.8
Z_thJC
[K/W]
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for Z_thJC calculation:
i R_th (K/W)
1 0.05
2 0.14
3 0.25
4 0.35
5 0.31
t_i (s)
0.001
0.030
0.060
0.130
0.920
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130415a