VBO52-18NO7 Datasheet, PDF (2/5 Pages) IXYS Corporation – Standard Rectifier Module

Rectifier
Symbol
V_RSM
V_RRM
I_R
V_F
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
bridge output current
V_R = 1800 V
V_R = 1800 V
I_F = 20 A
I_F = 40 A
IF = 20 A
I_F = 40 A
T_C = 115°C
rectangular
d = 0.5
V_F0
r_F
R _thJC
R _thCH
P_tot
I _FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C_J
junction capacitance
V_R = 400 V; f = 1 MHz
VBO52-18NO7
T_VJ = 25°C
T_VJ = 25°C
T_VJ = 25°C
T_VJ = 150°C
T_VJ = 25°C
T_VJ = 125 °C
T_VJ = 150°C
Ratings
min. typ. max. Unit
1900 V
1800 V
40 µA
1.5 mA
1.07 V
1.19 V
0.96 V
1.13 V
60 A
T_VJ = 150°C
T_C = 25°C
T_VJ = 45°C
V_R = 0 V
T_VJ = 150°C
V_R = 0 V
T_VJ = 45°C
V_R = 0 V
T_VJ = 150°C
V_R = 0 V
T_VJ = 25°C
0.78 V
8.1 mΩ
1.1 K/W
0.4
K/W
110 W
550 A
595 A
470 A
505 A
1.52 kA²s
1.48 kA²s
1.11 kA²s
1.06 kA²s
19
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130415a