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MIXA150R1200VA Datasheet, PDF (5/6 Pages) IXYS Corporation – XPT IGBT Module
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IGBT
300
VGE = 15 V
250
300
VGE = 15 V
17 V
250
19 V
13 V
11 V
200
200
IC
150
[A]
TVJ = 25°C
TVJ = 125°C
IC
150
[A]
TVJ = 125°C
9V
100
100
50
50
0
0
1
2
3
VCE [V]
Fig. 1 Typ. output characteristics
0
0
1
2
3
4
VCE [V]
Fig. 2 Typ. output characteristics
MIXA150R1200VA
preliminary
300
250
200
IC
150
[A]
100
TVJ = 125°C
50
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
20
IC = 150 A
VCE = 600 V
15
VGE
10
[V]
5
35
30
25
E 20
RG = 4.7
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
[mJ] 15
10
Eoff
5
Eon
Erec
0
0 100 200 300 400 500 600
QG [nC]
Fig. 4 Typ. turn-on gate charge
0
0 50 100 150 200 250 300
IC [A]
Fig. 5 Typ. switching energy
versus collector current
22
IC = 150 A
20
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
18
E 16
[mJ]
14
12
Eoff
Eon
10
0 2 4 6 8 10 12 14 16
RG [ ]
Fig. 6 Typ. switching energy
versus gate resistance
1
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
t [s]
Fig. 7 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
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Ri
0.027
0.028
0.06
0.065
ti
0.002
0.03
0.03
0.08
1
10
Data according to IEC 60747and per semiconductor unless otherwise specified
20151102b
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