MIXA150R1200VA Datasheet, PDF (2/6 Pages) IXYS Corporation – XPT IGBT Module

IGBT
Symbol
V_CES
V_GES
V_GEM
I _C25
I _C80
P_tot
V_CE(sat)
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
total power dissipation
collector emitter saturation voltage
V_GE(th)
I _CES
gate emitter threshold voltage
collector emitter leakage current
I _GES
Q _G(on)
t _d(on)
t_r
t _d(off)
t_f
E_on
E_off
RBSOA
I _CM
SCSOA
t SC
I _SC
R _thJC
R_thCH
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
MIXA150R1200VA
preliminary
Ratings
Conditions
T_VJ = 25°C
T_C = 25°C
T_C = 80°C
T_C = 25°C
I_C = 150A; V_GE = 15 V
T_VJ = 25°C
T_VJ = 125 °C
I_C = 6 mA; V_GE = V_CE
T_VJ = 25°C
V_CE = V_CES; V_GE = 0 V
T_VJ = 25°C
T_VJ = 125 °C
V_GE = ±20 V
V_CE = 600 V; V_GE = 15 V; I_C = 150 A
inductive load
V_CE = 600 V; I_C = 150 A
V_GE = ±15 V; R_G= 4,7 Ω
V_GE = ±15 V; R_G= 4,7 Ω
V_CEma = 1200 V
V_CEma =1200 V
V_CE = 900 V; V_GE = ±15 V
R_G= 4,7 Ω; non-repetitive
T_VJ = 125 °C
T_VJ = 125 °C
T_VJ = 125 °C
min.
5,4
typ. max. Unit
1200 V
±20 V
±30 V
220 A
150 A
695 W
1,8 2,1 V
2,1
V
5,9 6,5 V
0,5 mA
1
mA
500 nA
470
nC
70
ns
40
ns
250
ns
100
ns
14
mJ
16
mJ
450 ^A
600
0,20
10 µs
A
0,18 K/W
K/W
Diode
V_RRM
I_F25
I_{F 80}
V_F
max. repetitive reverse voltage
forward current
forward voltage
I_R
reverse current
Q _rr
I _RM
t _rr
E _rec
R _thJC
R _thCH
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
I_F = 150A
V_R = V_RRM
V_R = 600 V
-di_F /dt = 2500 A/µs
I_F = 150A; V_GE = 0 V
T_VJ = 25°C
T_C = 25°C
T_C = 80°C
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 125°C
1,95
0,8
20
175
350
10
0,20
1200 V
190 A
130 A
2,20 V
V
0,3 mA
mA
µC
A
ns
mJ
0,28 K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20151102b