IXGH60N60C3D1 Datasheet, PDF (5/7 Pages) IXYS Corporation – GenX3 600V IGBTs with Diode

Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
4.0
5.0
3.5
E_off
E_on - - - -
4.5
T_J = 125ºC , V_GE = 15V
3.0
V_CE = 480V
4.0
I _C = 80A
2.5
3.5
2.0
3.0
1.5
2.5
1.0
I _C = 40A
2.0
0.5
1.5
0.0
1.0
3 4 5 6 7 8 9 10 11 12 13 14 15
R_G - Ohms
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
3.5
4.0
3.0
E_off
E_on - - - -
3.5
R_G = 3Ω , V_GE = 15V
2.5
V_CE = 480V
3.0
2.0
2.5
I _C = 80A
1.5
2.0
1.0
1.5
I _C = 40A
0.5
1.0
0.0
0.5
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
180
140
160
t_f
t_d(off) - - - -
130
R_G = 3Ω , V_GE = 15V
140
V_CE = 480V
120
120
110
100
T_J = 125ºC
100
80
90
60
T_J = 25ºC
80
40
70
20
60
20 25 30 35 40 45 50 55 60 65 70 75 80
I_C - Amperes
IXGH60N60C3D1
IXGT60N60C3D1
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
4.0
4.0
3.5 E_off
E_on - - - -
3.5
R_G = 3Ω , V_GE = 15V
3.0
V_CE = 480V
3.0
2.5
2.5
2.0
T_J = 125ºC
2.0
1.5
1.5
1.0
1.0
T_J = 25ºC
0.5
0.5
0.0
0.0
20 25 30 35 40 45 50 55 60 65 70 75 80
I_C - Amperes
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
170
160
t_f
t_d(off) - - - -
150
T_J = 125ºC, V_GE = 15V
140
V_CE = 480V
130
120
110
I _C = 80A
100
90
I _C = 40A
80
70
60
3 4 5 6 7 8 9 10 11 12 13 14
R_G - Ohms
280
260
240
220
200
180
160
140
120
100
80
60
15
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
160
130
140
t_f
t_d(off) - - - -
120
R_G = 3Ω , V_GE = 15V
120
V_CE = 480V
I _C = 80A
110
100
100
80
90
I _C = 40A
60
80
40
70
20
60
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved