IXGH60N60C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 600V IGBTs with Diode

GenX3^TM 600V IGBTs IXGH60N60C3D1
with Diode
IXGT60N60C3D1
High Speed PT IGBTs for
40-100kHz switching
V_CES =
I_C110 =
V ≤ _CE(sat)
t_{fi (typ)} =
600V
60A
2.5V
50ns
TO-247 (IXGH)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C, (Limited by Leads)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_VJ = 125°C, R_G = 3Ω
Clamped Inductive Load
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
60
A
26
A
300
A
40
A
400
mJ
I_CM = 125
A
≤ V_CE V_CES
380
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250µA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE= 0V
I_GES
V_CE(sat)
V_CE = 0V, V_GE = ±20V
I_C = 40A, V_GE = 15V
T_J = 125°C
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.5 V
50 µA
1 mA
±100 nA
2.2 2.5 V
1.7
V
G
C
E
C (Tab)
TO-268 (IXGT)
G
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{High Avalanche Capability}
z _{Anti-Parallel Ultra Fast Diode}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100009B(01/10)