IXGH28N120B Datasheet, PDF (5/5 Pages) IXYS Corporation – High Voltage IGBT

IXGH 28N120B
IXGT 28N120B
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
450
t_d(off)
400
t_fi - - - - - -
I_C = 56A
350
R_G = 5Ω
V_GE = 15V
I_C = 14A
300
V_CE = 960V
250
I_C = 28A
200
150
I_C = 14A
I_C = 56A
100
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
10000
1000
Fig. 15. Capacitance
f = 1 MHz
C_ies
Fig. 14. Gate Charge
16
14
V_CE = 600V
I _C = 28A
12
I _G= 10mA
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Q _G - nanoCoulombs
Fig. 16. Reverse-Bias Safe
Operating Area
140
120
100
80
C_oes
100
10
0
C_res
5 10 15 20 25 30 35 40
V_{C E} - Volts
60
40
T_J = 125ºC
R_G = 5Ω
20
dV/dT < 10V/ns
0
100
300
500
700
900
V_{C E} - Volts
1100 1300
Fig. 17. Maxim um Transient Therm al Resistance
1.00
0.50
0.10
1
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10
100
Pulse Width - milliseconds
1000