IXGH28N120B Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage IGBT

High Voltage IGBT
IXGH 28N120B
IXGT 28N120B
V_CES = 1200 V
I_C25 = 50 A
V_CE(sat) = 3.5 V
t_fi(typ) = 160 ns
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
1200
V
1200
V
V_GES
V_GEM
Continuous
Transient
±20
V
±30
V
I_C25
T_C = 25°C
I_C110
T_C = 110°C
I_CM
T_C = 25°C, 1 ms
50
A
28
A
150
A
SSOA
(RBSOA)
V_GE = 15 V, T_VJ = 125°C, R_G = 5 Ω
Clamped inductive load
I_CM = 120
A
@ 0.8 V_CES
P_C
T_C = 25°C
250
W
T_J
-55 ... +150
°C
T_JM
150
°C
T_stg
-55 ... +150
°C
Maximum Lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
M_d
Weight
Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in.
TO-247 AD
6
g
TO-268
4
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 µA , V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
V_CE = V_CES, V_GE= 0 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
T_J = 25°C
1200
2.5
V
5V
25 µA
V_CE = 0 V, V_GE = ±20 V
I_C = 28A, V_GE = 15 V
T_J = 125°C
±100 nA
2.8 3.5 V
2.75
V
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
High Voltage IGBT for resonant
power supplies
- Induction heating
- Rice cookers
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Low switching losses, low V_(sat)
MOS Gate turn-on
- drive simplicity
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2004 IXYS All rights reserved
DS98987E(04/04)