IXGH10N60U1 Datasheet, PDF (5/6 Pages) IXYS Corporation – Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs

Fig.11 Maximum Forward Voltage Drop
40
35
30
25
20
15
10
5
0
0.0
T_J = 100°C
T_J = 150°C
T_J = 25°C
0.5
1.0
1.5
2.0
2.5
Voltage Drop - Volts
Fig.13 Junction Temperature Dependence
off I_RM and Q_r
1.4
1.2
1.0
0.8
I_RM
0.6
Q_r
0.4
0.2
0.0
0
40
80
120
160
T_J - Degrees C
Fig.15 Peak Reverse Recovery Current
25
T_J = 100°C
20
V_R = 350V
I_F = 8A
15
max
10
5
0
0
100
200
300
400
di_F /dt - A/µs
© 1996 IXYS All rights reserved
IXGH10N60U1 IXGH10N60AU1
Fig.12
25
Peak Forward Voltage V and
FR
Forward Recovery Time t
FR
1000
T_J = 125°C
I_F = 8A
20
800
V_FR
15
600
10
400
5
t_fr
200
0
0
0
50 100 150 200 250 300
di_F/dt - A/µs
Fig.14 Reverse Recovery Charge
1.0
T_J = 100°C
0.8
V_R = 350V
I_F = 8A
max
0.6
0.4
0.2
0.0
1
Fig.16
10
100
di_F /dt - A/µs
1000
Reverse Recovery Time
400
T_J = 100°C
300
V_R = 350V
I_F = 8A
200
100
0
0
100
200
300
400
di_F /dt - A/µs