IXGH10N60U1 Datasheet, PDF (1/6 Pages) IXYS Corporation – Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs

Low V_CE(sat) IGBT with Diode
High speed IGBT with Diode
Combi Packs
V_CES
IXGH10N60U1 600 V
IXGH10N60AU1 600 V
I_C25
20 A
20 A
V_CE(sat)
2.5 V
3.0 V
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 150 Ω
Clamped inductive load, L = 300 µH
P_C
T_J
T_JM
T_stg
M_d
Weight
T_C = 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
20
A
10
A
40
A
I_CM = 20
A
@ 0.8 V
CES
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l _{International standard package}
JEDEC TO-247 AD
l _{IGBT and anti-parallel FRED in one}
package
l _{2nd generation HDMOS}TM _process
l _{Low V}
CE(sat)
- for low on-state conduction losses
l _{MOS Gate turn-on}
- drive simplicity
l _{Fast Recovery Epitaxial Diode FRED)}
- soft recovery with low I
RM
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 750 µA, V_GE = 0 V
600
I
C
=
500
µA,
V
CE
=
V
GE
2.5
V = 0.8 • V
CE
CES
V_GE = 0 V
T
J
=
25°C
T_J = 125°C
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
10N60U1
10N60AU1
V
5.5 V
260 µA
2.5 mA
±100 nA
2.5 V
3.0 V
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switch-mode and resonant-mode}
power supplies
Advantages
l _{Space savings (two devices in one}
package)
l _{Easy to mount with 1 screw}
(isolated mounting screw hole)
l _{Reduces assembly time and cost}
© 1996 IXYS All rights reserved
91751G(3/96)