IXGA30N60C3D4 Datasheet, PDF (5/7 Pages) IXYS Corporation – GenX3 600V IGBT With Diode

Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.8
1.4
E_off
E_on - - - -
0.7 T_J = 125ºC , V_GE = 15V
V_CE = 300V
0.6
1.2
1.0
I _C = 40A
0.5
0.8
0.4
0.6
0.3
I _C = 20A
0.4
0.2
0.2
4
6
8
10
12
14
16
18
20
R_G - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.7
1.4
E_off
E_on - - - -
0.6
R_G = 5Ω , V_GE = 15V
1.2
V_CE = 300V
0.5
1.0
I _C = 40A
0.4
0.8
0.3
0.6
0.2
0.4
0.1
I _C = 20A
0.2
0
0.0
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
180
110
160
t_f
t_d(off) - - - -
100
R_G = 5Ω , V_GE = 15V
140
V_CE = 300V
90
120
T_J = 125ºC
80
100
70
80
60
60
50
40
40
T_J = 25ºC
20
30
0
20
10
15
20
25
30
35
40
I_C - Amperes
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IXGA30N60C3D4
IXGP30N60C3D4
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.6
1.2
E_off
E_on - - - -
0.5 RG = 5Ω , VGE = 15V
1.0
V_CE = 300V
0.4
0.8
0.3 ^{TJ = 125ºC}
0.6
0.2
0.4
0.1
T_J = 25ºC
0.2
0.0
0.0
10
15
20
25
30
35
40
I_C - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
180
140
170
t_f
t_d(off) - - - -
130
160
T_J = 125ºC, V_GE = 15V
120
V_CE = 300V
150
110
140
100
130
I _C = 40A
90
120
80
110
70
I _C = 20A
100
60
90
50
80
40
4
6
8
10
12
14
16
18
20
R_G - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
160
90
t_f
t_d(off) - - - -
140 _{RG = 5Ω , VGE = 15V}
80
V_CE = 300V
120
70
100
60
I _C = 40A, 20A
80
50
60
40
40
30
20
20
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade