IXGA30N60C3D4 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 600V IGBT With Diode

Preliminary Technical Information
GenX3^TM 600V IGBT IXGA30N60C3D4
With Diode
IXGP30N60C3D4
High Speed PT IGBTs for
40-100kHz switching
V_CES = 600V
I_C110 = 30A
V_CE(sat) ≤ 3.0V
t_fi(typ) = 47ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 5Ω
Clamped inductive load @ ≤ 600V
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
600
V
600
V
± 20
V
± 30
V
60
A
30
A
150
A
I_CM = 60
A
220
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
3.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
I_GES
V_CE = 0V, V_GE = ± 20V
V_CE(sat)
I_C = 20A, V_GE = 15V, Note 1
T_J = 125°C
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.5
5.5 V
75 μA
500 μA
±100 nA
2.6 3.0 V
1.8
V
TO-263 (IXGA)
G
E
TO-220 (IXGP)
C(TAB)
GCE
C(TAB)
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
Optimized for low switching losses
Square RBSOA
Anti-parallel ultra fast diode
International standard packages
Advantages
High power density
Low gate drive requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2008 IXYS CORPORATION, All rights reserved
DS100073(11/08)