IXFN420N10T Datasheet, PDF (5/6 Pages) IXYS Corporation – GigaMOS Trench HiperFET Power MOSFET

IXFN420N10T
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
340
R_G = 1Ω , V_GS = 10V
300
V_DS = 50V
260
I _D = 200A
220
180
140
I _D = 100A
100
25
35
45
55
65
75
85
95 105 115 125
T_J - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
700
240
t_r
t_d(on) - - - -
600
T_J = 125ºC, V_GS = 10V
200
V_DS = 50V
500
I _D = 200A
160
400
120
300
80
I _D = 100A
200
40
100
0
1
2
3
4
5
6
7
8
9
10
R_G - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
500
260
t_f
t_d(off) - - - -
400
R_G = 1Ω, V_GS = 10V
V_DS = 50V
220
300
T_J = 125ºC
180
200
T_J = 25ºC
140
100
100
0
60
40
60
80
100
120
140
160
180
200
I_D - Amperes
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
320
280
R_G = 1Ω , V_GS = 10V
V_DS = 50V
240
200
160
T_J = 125ºC
120
80
T_J = 25ºC
40
0
40
60
80
100
120
140
160
180
200
I_D - Amperes
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
700
220
t_f
t_d(off) - - - -
600
R_G = 1Ω, V_GS = 10V
200
V_DS = 50V
500
180
400
160
I _D = 200A
300
I _D = 100A
140
200
120
100
100
0
80
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
800
800
700
t_f
t_d(off) - - - -
700
T_J = 125ºC, V_GS = 10V
600
V_DS = 50V
I _D = 200A
600
500
500
400
I _D = 100A
400
300
300
200
200
100
100
1
2
3
4
5
6
7
8
9
10
R_G - Ohms
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