IXFN420N10T Datasheet, PDF (4/6 Pages) IXYS Corporation – GigaMOS Trench HiperFET Power MOSFET

IXFN420N10T
Fig. 7. Input Admittance
180
160
140
120
100
T_J = 150ºC
80
25ºC
60
40
- 40ºC
20
0
3.0
3.5
4.0
4.5
5.0
5.5
V_GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
250
200
150
T_J = 150ºC
100
T_J = 25ºC
50
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V_SD - Volts
350
300
250
200
150
100
50
0
0
Fig. 8. Transconductance
T_J = - 40ºC
25ºC
150ºC
20
40
60
80
100 120 140 160 180
I_D - Amperes
10
9
V_DS = 50V
I _D = 210A
8
I _G = 10mA
7
Fig. 10. Gate Charge
6
5
4
3
2
1
0
0
100
200
300
400
500
600
700
Q_G - NanoCoulombs
Fig. 11. Capacitance
100.0
Ciss
10.0
10,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
R_DS(on) Limit
T_J = 175ºC
T_C = 25ºC
Single Pulse
25µs
Coss
100 ^{External Lead Limit}
100µs
1.0
10
Crss
f = 1 MHz
0.1
1
0
5
10
15
20
25
30
35
40
1
V_DS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1ms
10ms
DC
100ms
10
100
V_DS - Volts
1,000
IXYS REF: F_420N10T (9V)9-22-09