IXFH230N10T Datasheet, PDF (5/6 Pages) IXYS Corporation – Trench HiperFET Power MOSFET

Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
48
47
R_G = 1Ω
46
V_GS = 10V
V_DS = 50V
45
44
I _D = 200A
43
42
41
40
I _D = 100A
39
38
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
500
450
400
350
300
250
200
150
100
50
0
1
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
100
t_r
t_d(on) - - - -
90
T_J = 125ºC, V_GS = 10V
80
V_DS = 50V
70
I _D = 200A, 100A
60
50
40
30
20
10
0
2
3
4
5
6
7
8
9
10
R_G - Ohms
24
23
22
21
20
19
18
17
16
15
14
13
12
40
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
62
T_J = 125ºC
t_f
t_d(off) - - - -
60
R_G = 1Ω, V_GS = 10V
58
V_DS = 50V
56
54
52
50
48
46
44
T_J = 25ºC
42
40
38
60
80
100 120 140 160 180 200
I_D - Amperes
IXFH230N10T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
55
R_G = 1Ω
V_GS = 10V
50
V_DS = 50V
45
T_J = 125ºC
40
T_J = 25ºC
35
30
25
20
40
60
80
100
120
140
160
180
200
I_D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
28
56
26
t_f
t_d(off) - - - -
54
R_G = 1Ω, V_GS = 10V
24
V_DS = 50V
52
22
50
20
I _D = 100A
48
18
46
16
44
I _D = 200A
14
42
12
40
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
400
360
t_f
t_d(off) - - - -
320
T_J = 125ºC, V_GS = 10V
V_DS = 50V
280
I _D = 200A
240
200
160
120
I _D = 100A
80
40
0
1
2
3
4
5
6
7
8
9
R_G - Ohms
220
200
180
160
140
120
100
80
60
40
20
10
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