IXFH230N10T Datasheet, PDF (1/6 Pages) IXYS Corporation – Trench HiperFET Power MOSFET

Preliminary Technical Information
Trench HiperFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFH230N10T
V_DSS =
I_D25 =
R_DS(on) ≤
100V
230A
4.7mΩ
TO-247
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_sold
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25 Notes 1, 2
Maximum Ratings
100
V
100
V
± 20
V
± 30
V
230
A
160
A
500
A
115
A
1.5
J
650
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
6
g
Characteristic Values
Min. Typ. Max.
100
V
2.5
4.5 V
±200 nA
50 μA
3 mA
4.7 mΩ
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International Standard Package}
z _{175°C Operating Temperature}
z _{High Current Handling Capability}
z _{Avalanche Rated}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
© 2009 IXYS CORPORATION, All rights reserved
DS100104(01/09)