GUO40-12NO1 Datasheet, PDF (5/5 Pages) IXYS Corporation – Standard Rectifier

GUO40-12NO1
Rectifier
60
300
50 Hz
0.8 x V _RRM
800
V_R = 0 V
40
I_F
[A]
20
T_VJ =
125°C
150°C
T_VJ = 25°C
0
0.4
0.8
1.2
1.6
V_F [V]
Fig. 1 Forward current vs.
voltage drop per diode
250
I_FSM
[A]
200
T_VJ = 45°C
T_VJ = 150°C
600
I²t
400
[A²s]
200
T_VJ = 45°C
T_VJ = 150°C
150
10^-3
10^-2
10^-1
10⁰
t [s]
Fig. 2 Surge overload current
vs. time per diode
0
1
10
t [ms]
Fig. 3 I²t vs. time per diode
20
16
P_tot ¹²
DC =
1
0.5
0.4
0.33
0.17
0.08
[W] ₈
4
R_thJA:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
40
30
I_F(AV)M
20
[A]
10
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0 4 8 12 16 0 25 50 75 100 125 150 175
I_F(AV)M [A]
T_A [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
0
0 25 50 75 100 125 150 175
T_C [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
5
4
Z_thJC ³
[K/W] ₂
1
0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for Z_thJC calculation:
i R_th (K/W)
1 0.302
2 1.252
3 1.582
4 1.164
t_i (s)
0.002
0.032
0.227
0.820
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131108c