GUO40-12NO1 Datasheet, PDF (2/5 Pages) IXYS Corporation – Standard Rectifier

Rectifier
Symbol
V_RSM
V_RRM
I_R
V_F
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
bridge output current
V_R = 1200 V
V_R = 1200 V
I_F = 10 A
I_F = 30 A
IF = 10 A
I_F = 30 A
T_C = 90°C
rectangular
d =⅓
V_F0
r_F
R _thJC
R _thCH
P_tot
I _FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C_J
junction capacitance
V_R = 400 V; f = 1 MHz
GUO40-12NO1
T_VJ = 25°C
T_VJ = 25°C
T_VJ = 25°C
T_VJ = 150°C
T_VJ = 25°C
T_VJ = 150 °C
T_VJ = 175°C
Ratings
min. typ. max. Unit
1300 V
1200 V
40 µA
1.5 mA
1.06 V
1.28 V
0.92 V
1.23 V
40 A
T_VJ = 175°C
T_C = 25°C
T_VJ = 45°C
V_R = 0 V
T_VJ = 150°C
V_R = 0 V
T_VJ = 45°C
V_R = 0 V
T_VJ = 150°C
V_R = 0 V
T_VJ = 25°C
0.50
10
0.74 V
16.3 mΩ
4.3 K/W
K/W
35 W
370 A
400 A
315 A
340 A
685 A²s
665 A²s
495 A²s
480 A²s
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131108c