DE375-102N12A Datasheet, PDF (5/5 Pages) List of Unclassifed Manufacturers – RF POWER MOSFET

DE375-102N12A
RF Power MOSFET
102N12A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the
SPICE level 3 MOSFET model. It includes the stray inductive terms L_G, L_S and L_D. Rd is the
R_DS(ON) of the device, Rds is the resistive leakage term. The output capacitance, C_OSS, and
reverse transfer capacitance, C_RSS are modeled with reversed biased diodes. This provides
a varactor type response necessary for a high power device model. The turn on delay and
the turn off delay are adjusted via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de375-102n12a.html
Net List:
.SUBCKT 102N12A 10 20 30
* TERMINALS: D G S
* 1000 Volt 12 Amp 0.95 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.5N
RD 4 1 0.95
DCOS 3 1 D3
RDS 1 3 5.0MEG
Doc #9200-0249 Rev 6
© 2009 IXYS RF
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
An IXYS Company
2401 Research Blvd., Suite 108
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
Fort Collins, CO USA 80526
970-493-1901 Fax: [phone]
Email: [e-mail]
.ENDS
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