|
DE375-102N12A Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – RF POWER MOSFET | |||
|
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
50MHz Maximum Frequency
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ⤠IDM, di/dt ⤠ï°100A/µs, VDD ⤠VDSS,
Tj ⤠150°C, RG = 0.2â¦
IS = 0
DE375-102N12A
RF Power MOSFET
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
12
A
72
A
12
A
30 mJ
5 V/ns
>200 V/ns
VDSS = 1000 V
ID25
= 12 A
RDS(on) ⤠1.05 â¦
PDC
= 940 W
PDC
PDHS
PDAMB
RthJC
RthJHS
Tc = 25°C
Derate 3.7W/°C above 25°C
Tc = 25°C
940 W
425 W
4.5 W
0.16 C/W
0.35 C/W
Symbol Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ.
max.
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 250 µa
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
1000
4.0
V
4.7
5.5 V
±100 nA
50 µA
1 mA
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ⤠300µS, duty cycle d ⤠2%
1.05 â¦
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
6.7
8.0 S
TJ
-55
+175 °C
TJM
Tstg
TL
Weight
1.6mm (0.063 in) from case for 10 s
175
°C
-55
+175 °C
300
°C
3
g
GATE
DRAIN
SG1 SG2
SD1 SD2
Features
⢠Isolated Substrate
â high isolation voltage (>2500V)
â excellent thermal transfer
â Increased temperature and power
cycling capability
⢠IXYS advanced low Qg process
⢠Low gate charge and capacitances
â easier to drive
â faster switching
⢠Low RDS(on)
⢠Very low insertion inductance (<2nH)
⢠No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
⢠Optimized for RF and high speed
switching at frequencies to 50MHz
⢠Easy to mountâno insulators needed
⢠High power density
|
▷ |