IXTP160N10T Datasheet, PDF (4/5 Pages) IXYS Corporation – TrenchMV Power MOSFET

IXTA160N10T
IXTP160N10T
Fig. 7. Input Admittance
200
180
160
140
120
100
80
60
TJ = 150ºC
25ºC
40
- 40ºC
20
0
3.5
4
4.5
5
5.5
6
6.5
7
V_GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
250
200
150
TJ = 150ºC
100
TJ = 25ºC
50
0
0.4 0.5 0.6 0.7 0.8 0.9 1
V_SD - Volts
1.1 1.2 1.3 1.4
10,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
Fig. 8. Transconductance
140
120
TJ = - 40ºC
100
25ºC
80
150ºC
60
40
20
0
0 20 40 60 80 100 120 140 160 180 200 220
I_D - Amperes
Fig. 10. Gate Charge
10
9
VDS = 50V
I D = 25A
8
I G = 10mA
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
Q_G - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
1.00
1,000
Coss
0.10
Crss
100
0.01
0
5
10
15
20
25
30
35
40
0.0001
0.001
0.01
0.1
1
10
V_DS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.