IXTP160N10T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchMV Power MOSFET

Preliminary Technical Information
TrenchMV^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA160N10T
IXTP160N10T
V_DSS = 100 V
I_D25 = 160 A
R_DS(on) ≤ 7.0 mΩ
TO-263 (IXTA)
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS
T_J ≤ 175°C, R_G = 5 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
100
V
100
V
± 30
V
160
A
75
A
430
A
25
A
500
mJ
3
V/ns
430
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10 Nm/lb.in.
3
g
2.5
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 250 μA
2.5
4.5 V
I_GSS
V_GS = ± 20 V, V_DS = 0 V
± 200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
5 μA
250 μA
R_DS(on)
V_GS = 10 V, I_D = 25 A, Notes 1, 2
6.1
7.0 mΩ
G
S
TO-220 (IXTP)
(TAB)
GD _S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
© 2006 IXYS CORPORATION All rights reserved
DS99650 (11/06)