IXTH440N055T2 Datasheet, PDF (4/6 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

IXTH440N055T2
IXTT440N055T2
Fig. 7. Input Admittance
200
180
160
140
120
100
80
T_J = 150ºC
25ºC
60
- 40ºC
40
20
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS - Volts
Fig. 8. Transconductance
240
T_J = - 40ºC
200
25ºC
160
150ºC
120
80
40
0
0
20
40
60
80 100 120 140 160 180 200
I_D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350
300
250
200
150
T_J = 150ºC
100
T_J = 25ºC
50
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V_SD - Volts
Fig. 10. Gate Charge
10
9
V_DS = 27.5V
8
I _D = 220A
I _G = 10mA
7
6
5
4
3
2
1
0
0
50
100
150
200
250
300
350
400
Q_G - NanoCoulombs
100,000
Fig. 11. Capacitance
10,000
Fig. 12. Forward-Bias Safe Operating Area
10,000
R_DS(on) Limit
1,000
Ciss
1,000
Coss
Crss
f = 1 MHz
100
0
5
10
15
20
25
30
35
40
V_DS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100
10
1
0.1
T_J = 175ºC
T_C = 25ºC
Single Pulse
External Lead Limit
1
10
V_DS - Volts
25µs
100µs
1ms
10ms
100ms
DC
100