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IXTH440N055T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Advance Technical Information
TrenchT2TM
Power MOSFET
IXTH440N055T2
IXTT440N055T2
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
RDS(on) ≤
55V
440A
1.8mΩ
TO-247 (IXTH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
55
V
55
V
± 20
V
± 30
V
440
A
160
A
1200
A
200
A
1.5
J
1000
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Notes 1 & 2
Characteristic Values
Min. Typ. Max.
55
V
2.0
4.0 V
±200 nA
10 μA
750 μA
1.8 mΩ
G
DS
D (Tab)
TO-268 (IXTT)
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Diode
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC/DC Converters and Off-line UPS
z Primary- Side Switch
z High Current Switching Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100220(12/09)