IXTA102N15T Datasheet, PDF (4/7 Pages) IXYS Corporation – Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Fig. 1. Output Characteristics
@ 25ºC
110
V_GS = 15V
100
10V
90
9V
8V
80
70
7V
60
50
40
30
6V
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_DS - Volts
Fig. 3. Output Characteristics
@ 150ºC
110
100
V_GS = 15V
10V
90
9V
8V
80
7V
70
60
50
6V
40
30
20
10
5V
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V_DS - Volts
Fig. 5. R_DS(on) Normalized to I_D = 51A Value
vs. Drain Current
5.0
4.5
V_GS = 10V
4.0
T_J = 175ºC
3.5
3.0
2.5
2.0
T_J = 25ºC
1.5
1.0
0.5
0
40
80
120
160
200
240
280
I_D - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 2. Extended Output Characteristics
@ 25ºC
300
V_GS = 15V
10V
250
9V
200
8V
150
7V
100
50
6V
0
0
2
4
6
8
10
12
14
16
V_DS - Volts
Fig. 4. R_DS(on) Normalized to I_D = 51A Value
vs. Junction Temperature
3.0
V_GS = 10V
2.6
2.2
I _D = 102A
1.8
I _D = 51A
1.4
1.0
0.6
0.2
-50 -25
0
25
50
75 100 125 150 175
T_J - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
80
70
External Lead Current Limit
60
50
40
30
20
10
0
-50 -25
0
25
50
75 100 125 150 175
T_C - Degrees Centigrade