IXTA102N15T Datasheet, PDF (1/7 Pages) IXYS Corporation – Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA102N15T
IXTH102N15T
IXTP102N15T
IXTQ102N15T
TO-263 (IXTA)
TO-247 (IXTH)
TO-220 (IXTP)
V_DSS =
I_D25 =
R_DS(on) ≤
150V
102A
18mΩ
TO-3P (IXTQ)
G
S
(TAB)
GD _S
(TAB)
G _DS
(TAB)
G
D
S
(TAB)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
150
V
150
V
± 20
V
± 30
V
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
102
A
75
A
300
A
51
A
750
mJ
I_S ≤ I_DM, V_DD ≤ V_DSS , T_J ≤ 175°C
T_C = 25°C
10
455
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
°C
260
°C
Mounting Torque (TO-220, TO-3P, TO-247) 1.13 / 10
Mounting Force (TO-263)
10..65/2.2..14.6
Nmlb.in.
N/lb.
TO-263
TO-220
TO-3P
TO-247
2.5
g
3.0
g
5.5
g
6.0
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
150
V
3.0
5.0 V
± 200 nA
5 μA
250 μA
18 mΩ
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Avalanche rated}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor drives}
z _{Uninterruptible power supplies}
z _{High speed power switching}
applications
© 2008 IXYS CORPORATION, All rights reserved
DS99661B(10/08)