IXGK100N170 Datasheet, PDF (4/5 Pages) IXYS Corporation – High Voltage IGBT

IXGN100N170
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 7. Transconductance
T_J = - 40ºC
25ºC
125ºC
20 40 60 80 100 120 140 160 180 200
I_C - Amperes
Fig. 8. Gate Charge
16
14
V_CE = 850V
I _C = 100A
12
I _G = 10mA
10
8
6
4
2
0
0
50 100 150 200 250 300 350 400 450
Q_G - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
700
600
500
400
100,000
Fig. 10. Capacitance
f = 1 MHz
10,000
Cies
300
200
T_J = 125ºC
100
R_G = 1Ω
dV / dt < 10V / ns
0
200
400
600
800 1000 1200 1400 1600 1800
V_CE - Volts
1,000
Coes
100
0
Cres
5
10
15
20
25
30
35
40
V_CE - Volts
1.000
Fig. 11. Maximum Transient Thermal Impedance
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
IXYS REF: G_100N170(9P)12-10-08