IXGK100N170 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage IGBT

Preliminary Technical Information
High Voltage IGBT
IXGN100N170
V_CES =
I_C90 =
V_CE(sat) ≤
1700V
95A
3.0V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1ms
V_GE= 15V, T_VJ = 125°C, R_G = 1Ω
Clamped inductive load @ 0.8 • V_CES
V_GE= 15V, V_CE = 1250V, T_J = 125°C
R_G = 10Ω, non repetitive
T_C = 25°C
50/60Hz
I_ISOL ≤ 1mA
t = 1min
t = 1s
Mounting torque
Terminal connection torque (M4)
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_CES
V_GE(th)
I_C = 3mA, V_GE = 0V
I_C = 8mA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
I_GES
V_CE = 0V, V_GE = ±20V
T_J = 125°C
V_CE(sat)
I_C = 100A, V_GE = 15V, Note 1
E
Maximum Ratings
1700
V
1700
V
±20
V
±30
V
160
A
95
A
600
A
I_CM = 200
A
10
μs
735
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Characteristic Values
Min. Typ. Max.
1700
3.0
V
5.0 V
50 μA
5 mA
±200 nA
2.5 3.0 V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z _{Optimized for low conduction and}
switching losses
z _{Square RBSOA}
z _{Isolation voltage 3000 V~}
z _{High current handling capability}
z _{International standard package}
Advantages
z _{High power density}
z _{Low gate drive requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Welding Machines}
© 2008 IXYS CORPORATION, All rights reserved
DS100091(12/08)