IXGH60N60 Datasheet, PDF (4/4 Pages) IXYS Corporation – Ultra-Low VCE(sat) IGBT

1000
40
T_J = 125°C
W R_G = 10
750
30
tfi
500
250
20
E_off
10
0
0
0 20 40 60 80 100 120
I_C - Amperes
Fig. 7. Dependence of tfi and E_OFF on I_C.
15
I_C = 60A
12
V_CE = 300V
9
6
3
0
0
50 100 150 200 250
Q_G - nanocoulombs
Fig. 9. Gate Charge
1
IXGH 60N60 IXGK 60N60
IXGT 60N60
1000
800
T_J = 125°C
I_C = 60A
600
18
E_off
16
tfi
14
400
12
200
0
10
10
20
30
40
50
R_G - Ohms
Fig. 8. Dependence of tfi and E_OFF on R_G.
10000
Cies
1000
100
10
0
10
20
30
40
V_CE - Volts
Fig. 10. Junction Capacitance Curves
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
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