IXGH60N60 Datasheet, PDF (1/4 Pages) IXYS Corporation – Ultra-Low VCE(sat) IGBT

Ultra-Low V_CE(sat) IGBT
IXGH 60N60
IXGK 60N60
IXGT 60N60
V_CES = 600 V
I_C25 = 75 A
V_CE(sat) = 1.7 V
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C, limited by leads
T_C = 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 10 W
Clamped inductive load, L = 30 mH
P
C
T
C
= 25°C
T_J
T_JM
T_stg
M_d
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-264
TO-268
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
60
A
200
A
I_CM = 100
A
@ 0.8 V_CES
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
6
g
10
g
4
g
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V
CE(sat)
Test Conditions
I_C = 250 mA, V_GE = 0 V
I
C
=
250
mA,
V
CE
=
V
GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I = I , V = 15 V
C
C90 GE
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
=
25°C
T_J = 125°C
V
5V
200 mA
1 mA
±100 nA
1.7 V
TO-247 AD (IXGH)
TO-268
(IXGT)
G
C
E
G
E
TO-264 (IXGK)
(TAB)
G
D
S
D (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard package
JEDEC TO-247 AD, TO-264, TO-268
• New generation HDMOS^TM process
• Low V_CE(sat) for minimum on-state
conduction losses
• High current handling capability
• MOS Gate turn-on drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Low losses, high efficiency
• High power density
• High power, surface mount package
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92796L (7/00)
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