IXFR102N30P Datasheet, PDF (4/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

IXFR 102N30P
Fig. 7. Input Adm ittance
150
125
100
75
50
T_J = 125ºC
25ºC
25
-40ºC
0
3.5 4 4.5 5 5.5 6 6.5 7 7.5
V _GS - V olts
Fig. 8. Trans conductance
100
90
80
70
T_J = -40ºC
25ºC
60
125ºC
50
40
30
20
10
0
0
25 50 75 100 125 150 175 200
I_D - A mperes
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
300
250
200
150
100
T_J = 125ºC
50
T_J = 25ºC
0
0.4
0.6
0.8
1
V _SD - V olts
1.2
1.4
10000
Fig. 11. Capacitance
Fig. 10. Gate Char ge
10
9
V_DS = 150V
8
I_D = 51A
I_G = 10mA
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175 200 225
Q_G - nanoCoulombs
1000
Fig. 12. Fo r w ar d -Bias
Safe Ope rating Are a
1000
C _{is s}
C _{os s}
R _{DS (on)} Lim it
100
10
25µs
100µs
1m s
10m s
f = 1MH z
C _{rs s}
100
0
5 10 15 20 25 30 35 40
V _DS - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
T_J = 150ºC
DC
T_C = 25ºC
1
1
10
100
V _DS - V olts
1000