IXFR102N30P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TM HiPerFET IXFR 102N30P
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
V = 300 V
DSS
I_D25 = 60 A
≤ R_DS(on) 36 m Ω
t_rr
≤ 200 ns
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T
L
V
ISOL
F_C
Weight
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T
C
=
25°
C,
pulse
width
limited
by
T
JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T
C
= 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
300
V
300
V
±20
V
±30
V
60
A
250
A
60
A
60
mJ
2.5
J
10
V/ns
250
-55 ... +150
150
-55 ... +150
300
2500
22..130/5..29
5
W
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
300
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 51 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
36 m Ω
ISOPLUS247 (IXFR)
E153432
G
DS
(Isolated Tab)
G = Gate
S = Source
D = Drain
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{International standard packages}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
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DS99247E(12/05)