IXFN26N90 Datasheet, PDF (4/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET

IXFN 25N90
IXFN 26N90
Figure 7. Gate Charge
15
VDS = 500 V
12
ID = 13 A
IG = 10 mA
9
6
Figure 8. Capacitance Curves
20000
10000
Ciss
f = 1MHz
1000
Coss
3
Crss
0
0 50 100 150 200 250 300 350
100
0 5 10 15 20 25 30 35 40
Gate Charge - nC
V_DS - Volts
CFaipgaucreita9n.cFeoCrwuarvrdesVoltage ^{Drop of the Intrinsic Diode}
50
45
40
35
30
25
TJ = 125oC
20
15
TJ = 25oC
Figure10. Drain Current vs. Case Temperature
30
IXFN26N90
25
IXFN25N90
20
15
10
10
5
5
0
0.0
0.3
0.6
0.9
1.2
1.5
0
-50 -25 0 25 50 75 100 125 150
V_SD - Volts
Case Temperatue - ^oC
Figure 11. Transient Thermal Resistance
0. 300
0.100
0.010
0.001
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
Pulse Width - Seconds
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4-4