IXFN26N90 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET^TM Power MOSFETs
Single Die MOSFET
IXFN 26N90
IXFN 25N90
V_DSS
900 V
900 V
I_{D (cont)}
26 A
25 A
R_DS(on)
0.30 W
0.33 W
t_rr
250 ns
250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
D
G
Preliminary data sheet
S
S
Symbol
V
DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_J
V_ISOL
M_d
Test Conditions
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T
C
= 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I_ISOL£ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
26N90
25N90
26N90
25N90
26N90
25N90
900
V
900
V
±20
V
±30
V
26
A
25
104
A
100
26
A
25
64
mJ
3
J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Weight
30
g
Applications
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GH(th)
I_GSS
I_DSS
R_DS(on)
V = 0 V, I = 3 mA
GS
D
V = V , I = 8 mA
DS
GS D
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
900
3.0
26N90
25N90
V
5.0 V
±200 nA
100 mA
2 mA
0.30 W
0.33 W
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97526E (10/99)
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