IXFA7N100P Datasheet, PDF (4/4 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

IXFA7N100P
IXFP7N100P
Fig. 7. Input Admittance
14
12
10
T_J = 125ºC
25ºC
- 40ºC
8
6
4
2
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V_GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
30
25
20
15
10
T_J = 125ºC
T_J = 25ºC
5
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V_SD - Volts
10,000
f = 1 MHz
1,000
100
Fig. 11. Capacitance
Ciss
Coss
Fig. 8. Transconductance
14
T_J = - 40ºC
12
10
25ºC
8
125ºC
6
4
2
0
0
2
4
6
8
10
12
14
16
I_D - Amperes
16
14
V_DS = 500V
I _D = 3.5A
12
I _G = 10mA
Fig. 10. Gate Charge
10
8
6
4
2
0
0
10
20
30
40
50
60
70
Q_G - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
1.00
0.10
Crss
10
0
5
10
15
20
25
30
35
40
V_DS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXYS REF: F_7N100P(56)9-16-08