IXFA7N100P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Polar ^TM HiPerFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA7N100P
IXFP7N100P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
1000
V
1000
V
±30
V
±40
V
7
A
18
A
7
A
300
mJ
10
V/ns
300
W
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.5
3.0
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0
6.0 V
±100 nA
15 μA
1.0 mA
1.9 Ω
V_DSS =
I_D25 =
≤ R_DS(on)
1000V
7A
1.9Ω
TO-263 AA (IXFA)
G
S
D (Tab)
TO-220AB (IXFP)
GD _S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{International Standard Packages}
z _{Fast Intrinsic Rectifier}
z _{Avalanche Rated}
z _{Low RDS(ON) and QG}
z _{Low Package Inductance}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99924A(10/09)