IXFA4N100Q_11 Datasheet, PDF (4/4 Pages) IXYS Corporation – HiperFET Power MOSFETs Q-Class

Figure 7. Gate Charge
15
12
V_DS = 600 V
I_D = 3 A
I_G = 10 mA
9
6
3
0
0 10 20 30 40 50 60
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic Diode
10
8
6
T_J = 125^OC
4
T_J = 25^OC
2
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Volts
Figure 11. Transient Thermal Resistance
1.00
2000
1000
100
IXFA4N100Q
IXFP4N100Q
Figure 8. Capacitance Curves
Ciss
Coss
Crss
f = 1MHz
10
0 5 10 15 20 25 30 35
V_DS - Volts
5
4
60
3
2
1
0
-50 -25 0 25 50 75 100 125 150
T_C - Degrees Centigrade
0.10
0.01
10^-4
10^-3
10^-2
10^-1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10⁰
10¹
IXYS REF: IXT_4N100Q (4U)04-01-11-A