IXFA4N100Q_11 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiperFET Power MOSFETs Q-Class

HiperFET^TM
Power MOSFETs
Q-Class
IXFA4N100Q
IXFP4N100Q
V_DSS =
I_D25
=
≤ R_DS(on)
1000V
4A
3.0Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_C
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
1000
V
1000
V
± 20
V
± 30
V
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
4
16
4
700
5
150
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
°C
260
°C
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65/2.2..14.6
1.13/10
Nm/lb.in.
Nm/lb.in.
TO-263
TO-220
2.5
g
3.0
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 1.5mA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
2.5
4.5 V
± 100 nA
50 μA
1 mA
3.0 Ω
TO-263 AA (IXFA)
G
S
D (Tab)
TO-220AB (IXFP)
GD _S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{International Standard Packages}
z _{Avalanche Rated}
z _{Fast Intrinsic Diode}
z _{Low QG}
z _{Low RDS(on)}
z _{Low Drain-to-Tab Capacitance}
z _{Low Package Inductance}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{Temperature and Lighting Controls}
© 2011 IXYS CORPORATION, All Rights Reserved
DS98705B(04/11)