ITXP1R6N50P Datasheet, PDF (4/4 Pages) IXYS Corporation – PolarHV Power MOSFET

IXTP 1R6N50P
IXTY 1R6N50P
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.5
Fig. 7. Input Adm ittance
T_J = 125∫ C
25∫ C
-40∫ C
4.5
5
5.5
6
6.5
V_{G S} - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
T_J = 125∫ C
T_J = 25∫ C
0.6
0.7
0.8
0.9
V_{S D} - Volts
1000
100
Fig. 11. Capacitance
f = 1MHz
Ciss
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Fig. 8. Transconductance
T_J = -40∫ C
25∫ C
125∫ C
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4
I _D - Amperes
Fig. 10. Gate Charge
10
9
V_DS = 250V
8
I_D = 0.8A
7
I_G = 10mA
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Q _G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
10
T_J = 150∫ C
R_DS(on) Limit
T_C = 25∫ C
Coss
1
10
Crss
DC
1
0
5 10 15 20 25 30 35 40
V_{D S} - Volts
0.1
10
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
100
V_{D S} - Volts
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
25µs
100µs
1ms
10ms
1000