ITXP1R6N50P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV Power MOSFET

Advance Technical Information
PolarHV^TM
Power MOSFET
IXTP 1R6N50P
IXTY 1R6N50P
N-Channel Enhancement Mode
V_DSS = 500 V
I_D25 = 1.6 A
R_DS(on) ≤ 6.5 Ω
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 50 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10s
Maximum tab temperature for soldering
TO-252 package for 10s
Mounting torque (TO-220)
TO-252
TO-220
Maximum Ratings
500
V
500
V
TO-252 (IXTY)
±30
V
G
±40
V
S
1.6
A
2.5
A
1.6
A ^{TO-220 (IXTP)}
5
mJ
75
mJ
TAB
(TAB)
10
43
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
G _DS
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
300
°C
260
°C
1.13/10 Nm/lb.in.
0.8
g
4
g
Features
z _{International standard packages}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
500
V
V_GS(th)
V_DS = V_GS, I_D = 250 µA
3.0
5.5 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
5 µA
50 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
6.5 Ω
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99441(09/05)