FIO50-12BD Datasheet, PDF (4/4 Pages) IXYS Corporation – Bidirectional Switch with NPT3 IGBT and fast Diode Bridge

20
mJ
16
E_on
12
8
4
0
0
td(on)
tr
Eon
20
40
V_CE = 600 V
V_GE = ±15 V
R_G = 39 Ω
T_VJ = 125°C
60 A
I_C
100
9n0s
80
70 _t
60
50
40
30
20
10
0
80
Fig. 7 Typ. turn on energy and switching
times versus collector current
8
V_CE = 600 V
mJ V_GE = ±15 V
E_on
6 ^{IC = 35 A}
T_VJ = 125°C
4
2
Eon
td(on)
tr
160
ns
120
t
80
40
0
0
10 20 30 40 50 60 70 Ω 80
R_G
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
FIO 50-12BD
6
mJ
E_{off 4}
V_CE = 600 V
V_GE = ±15 V
R_G = 39 Ω
T_VJ = 125°C
1200
E_off
ns
1000
800 ^t
600
2
t_{d(off) 400}
0
0
Fig. 8
200
t_f
0
20
40
60 A 80
I_C
Typ. turn off energy and switching
times versus collector current
4
mJ
E_{off 3}
V_CE = 600 V
V_GE = ±15 V
I_C = 35 A
T_VJ = 125°C
E_off
2
t_d(off)
1
800
ns
600
t
400
200
t_f
0
0
10 20 30 40 50 60 70Ω 80
R_G
Fig.10 Typ. turn off energy and switching
times versus gate resistor
© 2003 IXYS All rights reserved
4-4