FIO50-12BD Datasheet, PDF (2/4 Pages) IXYS Corporation – Bidirectional Switch with NPT3 IGBT and fast Diode Bridge

FIO 50-12BD
Diodes
Symbol
I_F25
I_F90
Conditions
T_C = 25°C
T_C = 90°C
Symbol
Conditions
V_F
I_RM
t_rr
R_thJC
R_thJS
I_F = 30 A; T_VJ = 25°C
T_VJ = 125°C
(per diode)
Component
Symbol
T_VJ
T
stg
V_ISOL
F_C
Conditions
I_ISOL ≤ 1 mA; 50/60 Hz
mounting force with clip
Symbol
Conditions
C_p
d_S,d_A
d_S,d_A
Weight
coupling capacity between shorted
pins and mounting tab in the case
pin - pin
pin - backside metal
Maximum Ratings
48
A
25
A
Equivalent Circuits for Simulation
Conduction
Characteristic Values
min. typ. max.
2.4 2.8 V
1.8
V
27
A
150
ns
1.3 K/W
1.6
K/W
IGBT (typ. at V_GE = 15 V; T_J = 125°C)
V₀ = 0.95 V; R₀ = 45 mΩ
Diode (typ. at T_J = 125°C)
V₀ = 1.26V; R₀ = 15 mΩ
Thermal Response
Maximum Ratings
-55...+150
°C
-55...+125
°C
2500
V~
20...120
N
IGBT
C_th1 = 0.067 J/K; R_th1 = 0.108 K/W
C_th2 = 0.175 J/K; R_th2 = 0.491 K/W
Diode
C_th1 = 0.039 J/K; R_th1 = 0.337 K/W
C_th2 = 0.090 J/K; R_th2 = 0.963 K/W
Characteristic Values
min. typ. max.
40
pF
1.7
mm
5.5
mm
9
g
Dimensions in mm (1 mm = 0.0394")
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